AZoNano

Researchers Find that the ‘Crossbar Latch’ Can Replace Transistors and Improve Processing Power

The often-quoted Moore 's Law says that we can expect processors to double in capacity every 18 months. And that has held true. Now computer scientists warn that - without some significant ...
Semiconductor Engineering

Fermi-level Tuning Improves Device Stability of 2D Transistors With Amorphous Gate Oxides

New technical paper titled “Improving stability in two-dimensional transistors with amorphous gate oxides by Fermi-level tuning” from researchers at Institute for Microelectronics, TU Wien, AMO GmbH, ...
Ars Technica

Transistors go 3D as Intel re-invents the microchip

At an event today in San Francisco, Intel announced one of the most important pieces of semiconductor news in many years: the company’s upcoming 22nm processors will feature a fundamental change to ...
Semiconductor Engineering

Transistor-Level Performance Evaluation Based On Wafer-Level Process Modeling

Three years ago, I wrote a blog entitled “Linking Virtual Wafer Fabrication Modeling with Device-level TCAD Simulation,” in which I described the seamless connection between the SEMulator3D virtual ...
AZOM

1D Metallic Gate Electrodes for Ultra-Miniature Transistors

A team of scientists from the Institute for Basic Science has developed a revolutionary technique for producing 1D metallic materials with a width of less than 1 nm by epitaxial growth. Using this ...
EDN

Detect wire breaks with unusual CMOS gate circuit

CMOS devices have large input impedance with input currents on the order of 0.01nA. Adding feedback circuitry can result in a latch-like device that can be used to store bits, and also operate in a ...
Design-Reuse

The Challenges and Benefits of Analog/Mixed-Signal and RF System Verification above the Transistor Level

Abstract— Today’s on-chip Analog/Mixed-Signal and RF (A/RF) systems have reached a limit of size and complexity where transistor-level SPICE and FastSPICE simulation approaches cannot deliver a ...