IEEE

Modeling the Increase in Effective Mobility in Short-Channel Oxide Thin-Film Transistors

Abstract: This paper investigates the dependence of effective carrier mobility on the channel length in oxide thin-film transistors (TFTs). Bottom-gate staggered TFTs fabricated with a sputtered ...
IEEE

A Scalable Physics-Based Compact Model for Terminal Charge, Intrinsic Capacitance and Drain Current in Nanosheet Field Effect Transistors

Abstract: This study introduces a physics-based, SPICE-compatible model for Nanosheet Field-Effect Transistors (NsFETs) that offers explicit expressions for the drain current, terminal charges, and ...
Irish Sun

ITV in schedule shake up for 2026 as budget cuts see channel’s shows cut short

ITV’S BRAND new daytime schedule shake up for 2026 has kicked off, as budget cuts have seen the channel slash the time of fan favourite shows. It was announced last May that Good Morning Britain would ...
Semiconductor Engineering

Channel-Last GAA NS Oxide FET (Stanford, TSMC, ETH Zurich et al.)

A new technical paper titled “Channel-last gate-all-around nanosheet oxide semiconductor transistors” was published by researchers at Stanford University, TSMC, ETH Zurich, SLAC National Accelerator ...