Mitsubishi Electric will invest approximately $64m (10 billion yen) to construct a new facility for the assembly and ...

Toshiba Electronics Europe has introduced a new gate driver IC series for three-phase brushless DC (BLDC) motors used in ...

Mercedes-Benz has revealed details of a new electric drivetrain that brings the drive technology of its concept electric car the VISION EQXX (with 800V system and SiC inverter) to the company's ...

STMicroelectronics has introduced 40V STripFET F8 MOSFETs with standard threshold voltage (VGS (th)), combining the ...

Infineon has announced the new OptiMOS 5 Linear FET 2, a MOSFET designed to provide the ideal trade-off between the R DS (on) ...

Wise-integration, a French pioneer in digital control of GaN and GaN ICs for power conversion, has opened its North American ...

€345k Vinnova grant will help company further develop Atomic Layer Etch Pitch Splitting technology AlixLabs AB, a Swedish ...

Wolfspeed has announced that Gregg Lowe, who has led the company's transition to a pure-play SiC company, will depart this month from his roles as president and CEO and as a member of the board. In ...

Demo developed with IFP Energies Nouvelles delivers high 30 kW/l power density and ease of paralleling Cambridge GaN Devices (CGD) and IFP Energies Nouvelles (IFPEN), a French public research and ...

Trench technology reduces power loss by about 50 percent compared to conventional planar SiC-MOSFETs Mitsubishi Electric will shortly begin shipping samples of a SiC MOSFET bare die for use in ...

Company to use funds to expand manufacturing of SiC wafers for EVs As part of the Biden-Harris Administration’s Investing in America agenda, the Department of Energy (DOE) has announced a $544 million ...